The full-digitally controlled Gate Drive Unit (GDU) for High Power Insulated Gate Bipolar Transistors (IGBT) provides all necessary features, such as active control, active clamping during switching off and active balancing of the collector voltage for IGBTs connected in series.

  • Wide input voltage range
  • Low power consumption
  • Variable gate array
  • Multiple soft turn-off
  • Multiple overcurrent protection
  • Multiple overvoltage protection
  • Active clamp protection
  • High isolation voltage
  • LED error indication
  • Feedback function

Crootem offers quick prototyping service, with very low cost. For more information, Contact our sales personals: